Memoria DDR3 HYNIX 2GB 1600MHz

$ 1.115,00

128M x 64-bit (2GB) ValueRAM. DDR3-1600 CL11 SDRAM (DRAM síncrona) 2Rx8, memoria módulo, cuatro componentes FBGA de 128 M x ​​16 bits. SPD programado para la latencia estándar JEDEC DDR3-1600 sincronización de 11-11-11 a 1,5 V. DIMM de 240 pines utiliza contactos dorados.

Categoría:

• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply

• VDDQ = 1.5V (1.425V ~ 1.575V) • 800MHz fCK for 1600Mb/sec/pin

• 8 independent internal bank

• Programmable CAS Latency: 11, 10, 9, 8, 7, 6

• Programmable Additive Latency: 0, CL – 2, or CL – 1 clock

• 8-bit pre-fetch

• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow

seamless read or write [either on the fly using A12 or MRS]

• Bi-directional Differential Data Strobe

• Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)

• On Die Termination using ODT pin

• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C

• Asynchronous Reset

• PCB : Height 1.180” (30.00mm), single sided component

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